Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities
Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities
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基于穿透X射线强度的SiGe合金半导体溶解和生长过程分析
DOI：
10.1016/j.jallcom.2013.12.093
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发表时间：
2014
期刊：
影响因子：
--
通讯作者：
Y. Inatomi and Y. Hayakawa
中科院分区：
文献类型：
--
作者：
M. Omprakash;M. Arivanandhan;R. Arun Kumar;H. Morii;T. Aoki;T. Koyama;Y. Momose;H. Ikeda;H. Tatsuoka;Y. Okano;T. Ozawa;S. Moorthy Babu;Y. Inatomi and Y. Hayakawa
采用x射线穿透法原位观察了Si在Ge熔体中的溶解、Si - Ge溶液中的溶质迁移和SiGe合金的晶体生长。实验采用Si（种子）/Ge/Si（饲料）的矩形夹层样品。将样品加热至生长温度1200℃，通过矩形CdTe线传感器记录x射线穿透样品的强度随时间和温度的变化。实验结果表明，尽管硅的进料温度相对高于硅的进料温度，但硅种子的溶解比硅晶体大。在进料界面处观察到SiGe的晶体生长，因为在生长界面附近通过穿透x射线强度的突变可以清楚地观察到生长界面。由于晶体以富Si成分生长（高温1200℃），溶液中Ge含量增加，导致生长界面处穿透x射线强度发生变化。基于穿透x射线强度分布图和生长模型，讨论了观察到的SiGe生长过程的生长机理。通过FE-EPMA分析测定了生长样品的组成。
Si dissolution into Ge melt, solute transport in the Si–Ge solution and crystal growth of SiGe alloys were in situ observed by X-ray penetration method. The rectangular shaped sandwich sample of Si (seed)/Ge/Si (feed) was used for the experiment. X-ray intensities penetrated through the sample, which was heated up to the growth temperature of 1200 °C, were recorded by rectangular shaped CdTe line sensor as a function of time and temperature. The experimental results demonstrated that the dissolution of Si seed was larger compared to Si feed crystal although Si feed temperature was relatively higher than that of seed. Crystal growth of SiGe was observed at the feed interface as the growth interface was observed clearly by an abrupt change of penetrated X-ray intensity near the growth interface. Since the crystal grew with Si rich composition (at high temperature 1200 °C), solution becomes Ge richer which causes penetrated X-ray intensity variation at the growth interface. The growth mechanism for the observed SiGe growth process was discussed based on the penetrated X-ray intensity profile and a growth model. The composition of the grown sample was measured by FE-EPMA analysis.
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