Effect of Mechanical Constraint on Domain Reorientation in Predominantly {111}-Textured Lead Zirconate Titanate Films
Effect of Mechanical Constraint on Domain Reorientation in Predominantly {111}-Textured Lead Zirconate Titanate Films
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机械约束对以 {111} 织构为主的锆钛酸铅薄膜中域重新取向的影响
DOI：
10.1111/jace.14159
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发表时间：
2016
影响因子：
3.9
通讯作者：
Brennecka, G. L.
中科院分区：
文献类型：
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作者：
Esteves, Giovanni;Wallace, Margeaux;Johnson-Wilke, Raegan;Fancher, Chris M.;Wilke, Rudeger H.;Trolier-McKinstry, Susan;Jones, Jacob L.;Brennecka, G. L.
用同步辐射X射线衍射仪测量了厚度为2.0μm的四方织构PbZr0.30Ti0.70O 3薄膜的铁电/铁弹磁畴重取向。将111布拉格反射峰位移引起的晶格应变和磁畴重定向量化为外加电场幅值的函数。通过112和211布拉格反射之间的强度交换，量化了磁畴的重新定向。报告了三种不同类型的薄膜的结果：固定在基片上的致密薄膜(加工时)，部分从基片上释放的致密薄膜，以及体积孔隙率为3%的薄膜。在相对于{111}择优(磁畴工程)取向错误取向的晶粒中观察到最大数量的磁畴重新定向。相对于夹持的薄膜，从衬底释放或具有孔隙率的薄膜在磁畴重定向和111晶格应变方面都没有显著的增强。相反，在{100}织构和随机取向的薄膜上进行的类似实验表明，在释放的和多孔的薄膜中，磁区重定向显著增强。因此，{111}织构的薄膜不太容易受机械约束引起的性能变化的影响，因为总体来说，{111}薄膜中的磁区重新取向比{100}薄膜中的要少。
Ferroelectric/ferroelastic domain reorientation was measured in 2.0 μm thick tetragonal {111}‐textured PbZr0.30Ti0.70O3thin films using synchrotron X‐ray diffraction (XRD). Lattice strain from the peak shift in the 111 Bragg reflection and domain reorientation were quantified as a function of applied electric field amplitude. Domain reorientation was quantified through the intensity exchange between the 112 and 211 Bragg reflections. Results from three different film types are reported: dense films that are clamped to the substrate (as‐processed), dense films that are partially released from the substrate, and films with 3% volume porosity. The highest amount of domain reorientation is observed in grains that are misoriented with respect to the {111} preferred (domain engineered) orientation. Relative to the clamped films, films that were released from the substrate or had porosity exhibited neither significant enhancement in domain reorientation nor in 111 lattice strain. In contrast, similar experiments on {100}‐textured and randomly oriented films showed significant enhancement in domain reorientation in released and porous films. Therefore, {111}‐textured films are less susceptible to changes in properties due to mechanical constraints because there is overall less domain reorientation in {111} films than in {100} films.