Thickness Dependence of Electrical Properties for High-k SrTa2O6 Thin Films Fabricated by Sol-Gel Method
Thickness Dependence of Electrical Properties for High-k SrTa2O6 Thin Films Fabricated by Sol-Gel Method
复制标题
溶胶-凝胶法制备高 k SrTa2O6 薄膜电性能的厚度依赖性
DOI：
10.1143/jjap.50.03ca05
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
T.Nishida
中科院分区：
文献类型：
--
作者：
Li Lu;T.Nishida
通过厚度依赖性的研究，研究了SrTa 2 O 6 薄膜与Pt电极之间的界面以及SrTa 2 O 6 薄膜中的缺陷。对于150nm的SrTa 2 O 6 薄膜，获得了约109的高介电常数和约10-8A/cm 2 的低漏电流密度。这些值与金属有机化学气相沉积(MOCVD)衍生的SrTa 2 O 6 薄膜相当。空间电荷限流机制在113 和150 nm SrTa 2 O 6 薄膜中占主导地位。在靠近113和150 nm SrTa 2 O 6 薄膜底部界面的层中发现较高的Ti浓度。根据这些结果，我们建议对这两种薄膜采用两层模型。在75 nm SrTa 2 O 6 薄膜中发现了损耗角正切的异常色散和普尔-弗兰克尔主导的漏电流。这可能是由于不仅在靠近底部界面的层中而且在整个薄膜中较高的Ti浓度引起的。
The interface between SrTa 2 O 6 thin films and Pt electrodes, and defects in SrTa 2 O 6 thin films were investigated through the study of thickness dependence. High dielectric constant of about 109 and low leakage current density of about 10-8 A/cm 2 were obtained for the 150 nm SrTa 2 O 6 thin film. These values are comparable with metal organic chemical vapor deposition (MOCVD) derived SrTa 2 O 6 thin films. Space-charge limited current mechanism predominated in the 113 and 150 nm SrTa 2 O 6 thin films. Higher Ti concentration was found in the layer close to the bottom interface of 113 and 150 nm SrTa 2 O 6 thin films. From these results, we suggest a two-layered model for these two thin films. The anomalous dispersion of loss tangent and Poole–Frenkel predominated leakage current was found in 75 nm SrTa 2 O 6 thin film. This may be induced by higher Ti concentration not only in the layer close to the bottom interface, but also in the whole thin film.