Large Light Output Kink Characteristics of Tunnel Injection Quantum Well Lasers

Large Light Output Kink Characteristics of Tunnel Injection Quantum Well Lasers
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隧道注入量子阱激光器的大光输出扭结特性

DOI:
10.1143/jjap.50.080205
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发表时间:
2011
影响因子:
1.5
通讯作者:
Tomoyuki Miyamoto
Tomoyuki Miyamoto
中科院分区:
物理与天体物理4区
文献类型:
--
作者:
Yasutaka Higa;Hiroshi Nakajima;Mikio Sorimachi;Tomoyuki Miyamoto

文献摘要

相似文献

在具有隧道注入量子阱结构的半导体激光器中,观察到光输出与电流特性之间存在较大的扭结。输出功率从13 mW增加到1.9 mW,电流增加0.06 ith (30 mA)。输出功率峰谷比(P/V)高达6.8。在隧道注水井单层厚度变化范围内,扭结电流和P/V比变化较大。根据实验结果的阈值电流和阈值电压特性,提出了可以假设的扭结机理。
A large kink in the light output versus current characteristics was observed in semiconductor lasers with a tunnel injection quantum well structure. The output power was changed from 13 to 1.9 mW under a small current increase of 0.06I th (30 mA). The peak-to-valley (P/V) ratio of the output power was as high as 6.8. The kink current and the P/V ratio changed greatly within a monolayer thickness variation of the tunnel injection well. The kink mechanism that can be assumed was presented on the basis of the threshold current and the threshold voltage characteristics of the experimental results.