Silver-hydrogen interactions in crystalline silicon
Silver-hydrogen interactions in crystalline silicon
复制标题
晶体硅中的银-氢相互作用
DOI：
10.1103/physrevb.59.5551
复制
发表时间：
1999
影响因子：
3.7
通讯作者：
J. Weber
中科院分区：
文献类型：
--
作者：
N. Yarykin;J.;H. Lemke;J. Weber
用深能级瞬变光谱研究了掺银硅晶体中氢引起的缺陷。由于氢原子形成缺陷，取代态银杂质的电活性可以完全消除。然而，这一过程包括产生中间的电活性银氢络合物。其中一个缺陷，Ag-H1，只有一个氢原子，在能隙中引入了三个能级。另一种电活性络合物是通过在Ag-H1缺陷上添加第二个氢原子而形成的。Ag-H络合物在300-350℃温度下稳定。电非活性络合物包括至少三个氢原子，并在450℃下退火。详细研究了缺陷转变的动力学，估计银-氢相互作用的距离非常接近晶格参数。@S0163-1829~99 02308-5#
The creation of defects by hydrogen in silver-doped silicon crystals is investigated by deep-level transient spectroscopy. The electrical activity of the substitutional silver impurities can be totally removed due to defect formation with hydrogen atoms. However, this process includes the creation of intermediate electrically active silver-hydrogen complexes. One of the defects, Ag-H1, contains one hydrogen atom and introduces three levels in the energy gap. Another electrically active complex is formed by addition of a second hydrogen atom to the Ag-H1 defect. The Ag-H complexes are stable up to 300‐350 °C. The electrically inactive complex includes at least three hydrogen atoms and anneals out at ;450 °C. The kinetics of the defect transformations are studied in detail, and the distance of silver-hydrogen interaction is estimated to be very close to the lattice parameter. @S0163-1829~99!02308-5#