Crystallographic dependence of loss in domain engineered relaxor-PT single crystals
Crystallographic dependence of loss in domain engineered relaxor-PT single crystals
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DOI：
10.1063/1.3125431
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发表时间：
2009-04-20
影响因子：
4
通讯作者：
Shrout, Thomas R.
中科院分区：
文献类型：
--
作者：
Zhang, Shujun;Sherlock, Nevin P.;Shrout, Thomas R.
域工程<001>取向弛豫-PbTiO3铁电晶体表现出高机电性能和低机械Q值，类似于“软”压电陶瓷。然而，它们具有低介电损耗（取向）的特性。<110>取向弛豫-PT晶体的高Q值以及高机电耦合（类似于0.9）使它们成为基于谐振的高功率换能器应用的有希望的候选者。
Domain engineered < 001 > oriented relaxor-PbTiO3 ferroelectric crystals exhibit high electromechanical properties and low mechanical Q values, analogous to "soft" piezoelectric ceramics. However, their characteristic low dielectric loss ( orientation. The high Q, together with high electromechanical coupling (similar to 0.9) for < 110 > oriented relaxor-PT crystals, make them promising candidates for resonant based high power transducer applications.