Indirect-to-direct gap transition in strained and unstrained SnxGe1-x alloys
Indirect-to-direct gap transition in strained and unstrained SnxGe1-x alloys
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DOI：
10.1103/physrevb.89.165201
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发表时间：
2014-04-09
影响因子：
3.7
通讯作者：
Kresse, G.
中科院分区：
文献类型：
--
作者：
Eckhardt, C.;Hummer, K.;Kresse, G.
本文研究了无应变、压应变和拉应变的SnxGe_（1-x）合金从间接带隙半导体到直接带隙半导体的转变随Sn含量0
The transition from an indirect to a direct gap semiconductor in unstrained as well as compressively and tensile strained SnxGe1-x alloys is investigated as a function of the Sn content 0