Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity
Evaluation of zinc interstitial in Si-ion implanted ZnO bulk single crystals by a Rutherford backscattering study: An origin of low resistivity
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DOI：
10.1016/j.nimb.2010.02.017
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发表时间：
2010-06
影响因子：
1.3
通讯作者：
Y. Izawa;K. Matsumoto;K. Kuriyama;K. Kushida
中科院分区：
文献类型：
--
作者：
Y. Izawa;K. Matsumoto;K. Kuriyama;K. Kushida
