Modulating the morphology of ZnO nanorod arrays on SiOx- mask-patterned GaN template
Modulating the morphology of ZnO nanorod arrays on SiOx- mask-patterned GaN template
复制标题
SiOx 掩模图案化 GaN 模板上 ZnO 纳米棒阵列形貌的调制
DOI：
10.1016/j.matlet.2017.02.047
复制
发表时间：
2017
影响因子：
3
通讯作者：
Duan Huiling
中科院分区：
文献类型：
--
作者：
Shen Panpan;Tong Yuzhen;Sheng Dian;Tang Xingyi;Shao Li-Hua;Duan Huiling
高度有序的垂直排列的 ZnO 纳米棒阵列是通过水热法通过可回收的 SiOx 掩模图案的 GaN 模板制造的。 ZnO纳米棒的形貌可调控，且其机理尚属首次研究。调节取决于成核状态，可以通过添加氨来改变 PH 值来调节成核状态。由于纳米棒的高度和水平 c 面均匀，在单层石墨烯和阵列的光滑表面之间观察到紧密接触。 ZnO 纳米棒阵列通过 XRD 和室温 PL 进行表征。
Highly ordered vertically aligned ZnO nanorod arrays are fabricated via a recyclable SiOx-mask-patterned GaN template by hydrothermal method. The morphology of ZnO nanorods can be modulated, and the mechanism is studied for the first time. The modulation depends on the nucleation state, which can be tuned by varying PH value through adding ammonia. Tight contact is observed between a monolayer graphene and the smooth surface of the arrays due to the uniform height and horizontal c-plane of nanorods. The ZnO nanorod arrays are characterized by XRD and Room-temperature PL.