Structural and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin films grown on Ir/MgO buffered Si(100) substrates
Structural and electrical properties of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin films grown on Ir/MgO buffered Si(100) substrates
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DOI：
10.1007/s00339-007-4080-z
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发表时间：
2007-06
期刊：
影响因子：
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通讯作者：
F. Wu;X. M. Li;W. Yu;X. D. Gao;X. Zhang
中科院分区：
文献类型：
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作者：
F. Wu;X. M. Li;W. Yu;X. D. Gao;X. Zhang
用脉冲激光沉积法在Ir/MgO缓冲的Si（100）衬底上生长了0.7Pb（Mg_（1/3）Nb_（2/3））O_3 - 0.3PbTiO_3（PMN-PT）薄膜。通过X射线衍射分析（XRD）研究了PMN-PT薄膜的晶相和择优取向。研究了在650 °C下制备的PMN-PT薄膜的微观结构、介电和铁电性能。结果表明，在650 °C下制备的薄膜具有纯钙钛矿相和单一的c轴取向。在1 kHz频率下，薄膜的介电常数和损耗因子分别为1000和0.04;在480 kV/cm电场下，薄膜的剩余极化强度和矫顽场分别为13.0 μC/cm 2和100 kV/cm。
Thin films of 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3(PMN-PT) have been grown on Ir/MgO buffered Si(100) substrates at different substrate temperatures by pulsed laser deposition. Crystalline phases as well as preferred orientations in the PMN-PT films were investigated by X-ray diffraction analysis (XRD). The microstructure, dielectric and ferroelectric properties of PMN-PT film prepared at 650 °C were studied. The results show that the film prepared at 650 °C exhibits pure perovskite phase and single c-axis orientation. The dielectric constant and dissipation factor of the single c-axis oriented film are 1000 and 0.04 at a frequency of 1 kHz, while the remnant polarization and coercive field are about 13.0 μC/cm2and 100 kV/cm under an electric field of 480 kV/cm, respectively.