A Wideband Transformer-Coupled CMOS Power Amplifier for $X$-Band Multifunction Chips
A Wideband Transformer-Coupled CMOS Power Amplifier for $X$-Band Multifunction Chips
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DOI：
10.1109/tmtt.2011.2131676
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发表时间：
2011-04
影响因子：
4.3
通讯作者：
B. Ku;Sang-Hyun Baek;Songcheol Hong
中科院分区：
文献类型：
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作者：
B. Ku;Sang-Hyun Baek;Songcheol Hong
提出了一种宽带变压器耦合的CMOS功率放大器。片上传输线变压器是输出、输入和级间匹配网络的关键部件。该宽带片上变压器无需任何附加的电感器件即可利用，从而可以获得宽带功率特性。该功率放大器采用0.18-μm cmos工艺制造。在9.5 GHz下，其饱和输出功率为21.5dBm，功率附加效率(PAE)为20.3%，输出1dB增益压缩功率(P1dB)为20.2dBm，功率附加效率(PAE)为14.8%。小信号增益为25.3分贝，3分贝带宽为6.5 GHz(6.5-13 GHz)。芯片面积为1.34 mm×0.47 mm。在已报道的X/Ku波段CMOS功率放大器中，该放大器达到了最高的品质因数，并且表现出了适合相控阵系统的性能。
This paper presents a wideband transformer-coupled CMOS power amplifier (PA). On-chip transmission-line transformers are used as key components of matching networks at output, input, and interstage. The wideband on-chip transformer is harnessed without any additional inductive devices so that a wideband power characteristic can be achieved. The PA is fabricated using a 0.18-μm CMOS process. It provides a saturated output power of 21.5 dBm with the power-added efficiency (PAE) of 20.3%, and the output 1-dB gain-compressed power (P1 dB) is 20.2 dBm with the PAE of 14.8% at 9.5 GHz, respectively. The small-signal gain is 25.3 dB and the 3-dB bandwidth is 6.5 GHz (6.5-13 GHz). The die area is 1.34 mm × 0.47 mm. Among the reported X/Ku-band CMOS PAs, this amplifier achieves the highest figure of merit, and also shows suitable performances for phased-array systems.