A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
复制标题
一种新型的硅薄膜相位调制准分子激光结晶方法
DOI：
10.1143/jjap.37.l492
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发表时间：
1998
影响因子：
1.5
通讯作者：
M. Matsumura
中科院分区：
文献类型：
--
作者：
C. Oh;M. Ozawa;M. Matsumura
我们提出了一种新颖的准分子激光结晶方法，该方法使用相移掩模在玻璃基板上进行大晶粒硅薄膜的生长。由于激光的干涉效应，掩模处光的相位差导致样品表面光强度的空间调制，从而触发横向晶粒生长。通过单次照射可以生长出大至 7 µm 的晶粒。
We propose a novel excimer-laser crystallization method that uses a phase-shift mask for large-grain growth of Si thin films on the glassy substrate. Due to interference effects of the laser light, the phase difference of light at the mask results in spatial modulation of light intensity at the sample surface, which triggers the lateral grain growth. Grains as large as 7 µm could be grown by a single-shot irradiation.