Femtosecond investigations of spectral hole burning in semiconductor lasers
Femtosecond investigations of spectral hole burning in semiconductor lasers
复制标题
半导体激光器光谱烧孔的飞秒研究
DOI：
10.1063/1.113881
复制
发表时间：
1995
影响因子：
4
通讯作者：
J. Fujimoto
中科院分区：
文献类型：
--
作者：
Chi‐Kuang Sun;B. Golubovic;H. Choi;Christine A. Wang;J. Fujimoto
报道了使用外差非简并泵浦探针技术在 InGaAs/AlGaAs 应变层单量子阱二极管激光器的增益区域中对光谱烧孔效应的研究。该技术允许同时测量半导体激光器中瞬态增益的飞秒动力学和光谱依赖性。在高偏置电流下，观察到强烈的光谱烧孔效应。
An investigation of spectral hole burning effects is reported in the gain region of InGaAs/AlGaAs strained‐layer single quantum well diode lasers, using a heterodyne nondegenerate pump‐probe technique. This technique permits simultaneous measurement of the femtosecond dynamics and spectral dependence of transient gain in semiconductor lasers. At high bias current, strong spectral hole burning effects were observed.