High frequency noise in manufacturable carbon nanotube transistors
High frequency noise in manufacturable carbon nanotube transistors
复制标题
可制造碳纳米管晶体管中的高频噪声
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
D. Wang
中科院分区：
文献类型：
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作者：
P. Sakalas;M. Schroter;M. Bolter;M. Claus;S. Mothes;D. Wang
本文首次对晶圆级可制造cntfet的高频噪声参数进行了测量和建模。这些第一批多管多指cntfet的最小噪声系数仍然相对较高（1 GHz时NFmin = 3.5 dB）。基于详细的紧凑模型，这种噪声的来源可以解释为寄生网络和金属管的存在。
HF noise parameters were measured and modeled for the first time for wafer-scale manufacturable CNTFETs. These first multi-tube multi-finger CNTFETs exhibit still relatively high values for the minimum noise figure (NFmin = 3.5 dB at 1 GHz). Based on detailed compact modeling, the origin of this noise can be explained by the existence of the parasitic network and metallic tubes.