Growth of alkali halide crystals with a lowered concentration of oxygenous anions using SiX4 as a removing agent
Growth of alkali halide crystals with a lowered concentration of oxygenous anions using SiX4 as a removing agent
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使用 SiX4 作为去除剂生长具有较低浓度的含氧阴离子的碱金属卤化物晶体
DOI：
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发表时间：
1968
期刊：
影响因子：
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通讯作者：
E. Rubinova
中科院分区：
文献类型：
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作者：
J. Eckstein;U. Gross;E. Rubinova
描述了用SiX4处理碱卤化物熔体的程序的三种变体。每一种方法都使凝固的熔体不再粘在石英坩埚壁上。因此，制备的桶便于通过区域精炼或通过降低坩埚的方法进一步适应晶体生长。
Three variants of a procedure for treatment of alkali halide melts by means of SiX4 are described. Each of these ways succeeded the solidified melt no more sticking to the walls of the quartz crucible. Thus prepared barrels are convenient to further adaptation by zonal refining or for crystal growing, e.g. by the crucible lowering method.
Chemistry of SiX4 effect on the hydrolysis products and some other oxygenous anions in alkali halides melts is dicussed.
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