Low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode
Low-noise terahertz-wave detection by InP/InGaAs Fermi-level managed barrier diode
复制标题
通过 InP/InGaAs 费米能级管理势垒二极管进行低噪声太赫兹波检测
DOI：
10.1117/12.2320026
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发表时间：
2016
影响因子：
2.3
通讯作者：
T. Ishibashi
中科院分区：
文献类型：
--
作者：
Hiroshi Ito;T. Ishibashi
通过将蝴蝶结天线集成 FMB 二极管与前置放大器相结合，研究了 InP/InGaAs 费米能级管理势垒二极管（FMB 二极管）在太赫兹波检测中的噪声性能。制造的准光学 FMB 二极管模块展示了 160 GHz 至 1.4 THz 频率范围内的宽带信号检测，峰值灵敏度为 3.2 MV/W。在 300 GHz 时实现了 3.0 pW/ 的最低噪声等效功率和超过 5 个十进制的宽动态范围。
The noise performance of an InP/InGaAs Fermi-level managed barrier diode (FMB diode) in terahertz-wave detection was investigated by combining a bowtie-antenna-integrated FMB diode with a preamplifier. The fabricated quasi-optical FMB diode module demonstrated broadband signal detection at frequencies ranging from 160 GHz to 1.4 THz with a peak sensitivity of 3.2 MV/W. The lowest noise-equivalent-power of 3.0 pW/ with a wide dynamic range of more than five decades was achieved at 300 GHz.