Toward Temperature Tracking With Unipolar Metal-Oxide Thin-Film SAR C-2C ADC on Plastic
Toward Temperature Tracking With Unipolar Metal-Oxide Thin-Film SAR C-2C ADC on Plastic
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DOI：
10.1109/jssc.2018.2831211
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发表时间：
2018-08-01
影响因子：
5.4
通讯作者：
Myny, Kris
中科院分区：
文献类型：
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作者：
Papadopoulos, Nikolas P.;De Roose, Florian;Myny, Kris
金属氧化物薄膜晶体管（TFT）的成熟凸显了在行业兼容技术中在大面积柔性和可拉伸基板上开发坚固和低成本电子产品的机会。具有传感器节点的万物互联应用正在推动模数转换器（ADC）的发展。在本文中，自偏置和自数字控制逐次逼近型ADC与集成的参考和传感器读入电路以及印刷的负温度系数（NTC）传感器使用单极双栅金属氧化物（InGaZnO）TFT的演示。该系统是在高达400 Hz的时钟和总功耗为245 mW（73 μ W的模拟），在最大电源为30 V的测量。射频识别ADC由1394个铟镓锌氧化物TFT和31个金属-绝缘体-金属电容器组成。品质因数为26 nJ/c.s.通过外部微控制器驱动的ADC实现。的芯片的各个块的鲁棒性的特点和产量进行了讨论。
The maturity of metal-oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-of Everything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this paper, a self-biased and self-digital-controlled successive approximation ADC with integrated references and sensor read-in circuitry together with a printed negative temperature coefficient (NTC) sensor using unipolar dual-gate metal-oxide (InGaZnO) TFTs is demonstrated. The system is operated at a clock of up to 400 Hz and a total power dissipation of 245 mW (73 mu W from analog) at a maximum power supply of 30 V is measured. The radio-frequency identification-ready ADC comprises of a total of 1394 indium-gallium-zinc oxide TFTs and 31 metal-insulatormetal capacitors. A figure of merit of 26 nJ/c.s. is achieved from the ADC driven from external microcontroller. The robustness of the various blocks of the chip is characterized and the yield is discussed.