Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
Scanning spreading resistance microscopy of two-dimensional diffusion of boron implanted in free-standing silicon nanostructures
复制标题
扫描扩散电阻显微镜观察注入独立硅纳米结构中硼的二维扩散
DOI：
--
复制
发表时间：
2005
期刊：
影响因子：
--
通讯作者：
W. Vandervorst
中科院分区：
文献类型：
--
作者：
S. Kluth;D. Álvarez;Trellenkamp;J. Moers;S. Mantl;J. Kretz;W. Vandervorst
B注入1 keV，1×1015at.cm-2到125 nm宽的独立式Si纳米结构中，在N2中退火0 s，1050°C后，使用扫描扩展电阻显微镜进行了表征。已观察到弯曲的扩散前沿。脊中心的B比两侧扩散得更远。在SUPREM-IV模拟中也观察到了类似的效果。这是由于离子注入引起的过量Si自致晶体的复合导致垂直表面附近的瞬态增强扩散减少。
B implants of 1keV, 1×1015at.cm−2 into 125-nm-wide, free-standing Si nanostructures have been characterized using scanning spreading resistance microscopy following a 0s, 1050°C anneal in N2. A curved diffusion front has been observed. B in the center of the ridge diffuses further than at the sides. A similar effect has been observed in SUPREM-IV simulations. It is attributed to a reduction in transient enhanced diffusion close to the vertical surfaces due to recombination of ion-implantation-induced excess Si self-interstitials.