A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance
A 50nm MHEMT millimeter-wave MMIC LNA with wideband noise and gain performance
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DOI：
10.1109/mwsym.2014.6848288
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
Phillip M. Smith;M. Ashman;Dong Xu;Xiaoping S. Yang;C. Creamer;P. Chao;K. Chu;K. Duh;Christopher Koh;J. Schellenberg
中科院分区：
文献类型：
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作者：
Phillip M. Smith;M. Ashman;Dong Xu;Xiaoping S. Yang;C. Creamer;P. Chao;K. Chu;K. Duh;Christopher Koh;J. Schellenberg
报道了一种具有先进性能的50nm MHEMT毫米波MMIC低噪声放大器。3级LNA在80GHz时的片上噪声系数（NF）低至1.6dB，增益为25dB，并且还具有前所未有的宽带性能，30-100GHz频段的最小增益为20dB， 43-90GHz频段的最小噪声系数< 2.5dB。封装在WR-12模块中的LNA在74-80GHz范围内的法兰NF值为2.0dB，在整个60-90GHz波导频段内，NF值< 2.6dB，增益为27±2dB。
A 50nm MHEMT millimeter-wave MMIC low noise amplifier with state-of-the-art performance is reported. The 3-stage LNA exhibits on-wafer noise figure (NF) as low as 1.6dB with 25dB gain at 80GHz, and also shows unprecedented wideband performance, with 20dB minimum gain across the 30-100GHz band and NF <;2.5dB over the 43-90GHz band. An LNA packaged in a WR-12 module has flange NF of 2.0dB over 74-80GHz and NF <;2.6dB with 27 ± 2dB gain across the full 60-90GHz waveguide band.