Optical absorption measurements on crystalline silicon test masses at 1550 nm
Optical absorption measurements on crystalline silicon test masses at 1550 nm
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1550 nm 处晶体硅测试质量的光吸收测量
DOI：
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发表时间：
2012
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通讯作者：
R. Schnabel
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作者：
J. Steinlechner;C. Krüger;N. Lastzka;S. Steinlechner;A. Khalaidovski;R. Schnabel
晶体硅目前正被讨论作为未来几代引力波探测器的试验材料，这些探测器将在低温下工作。我们提出了在室温下在波长为1550 nm的大尺寸晶体硅样品的光吸收测量。利用光热自相位调制技术，在高强度单片腔装置中测量了吸收。在700 W cm−2的强度下，该样品的吸收系数（电阻率为11 kΩ cm）的测量结果为αA =（264 ± 39）ppm cm−1。
Crystalline silicon is currently being discussed as test-mass material for future generations of gravitational wave detectors that will operate at cryogenic temperatures. We present optical absorption measurements on a large-dimension sample of crystalline silicon at a wavelength of 1550 nm at room temperature. The absorption was measured in a high-intensity monolithic cavity setup using the photo-thermal self-phase modulation technique. The result for the absorption coefficient of this sample with a specific resistivity of 11 kΩ cm was measured to be αA = (264 ± 39) ppm cm−1 for an intensity of 700 W cm−2.