Controlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method
Controlled selective growth of ZnO nanorod and microrod arrays on Si substrates by a wet chemical method
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DOI：
10.1063/1.2364162
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发表时间：
2006-10-16
影响因子：
4
通讯作者：
Cheong, Hyeonsik
中科院分区：
文献类型：
--
作者：
Kim, Yong-Jin;Lee, Chul-Ho;Cheong, Hyeonsik
本文描述了利用湿化学方法在硅衬底上选择性地生长ZnO微棒和纳米棒阵列。为了控制ZnO微棒和纳米棒的尺寸和位置，采用电子束光刻技术在Si衬底上用中间ZnO层制备了聚甲基丙烯酸甲酯（PMMA）亚微米图案。ZnO结构的选择性生长是通过PMMA掩膜上没有ZnO成核位点来实现的，导致ZnO结构仅在ZnO层暴露的图图化孔上进行位置控制生长。此外，ZnO微棒的直径由孔洞尺寸决定，当孔洞直径为250 nm时，ZnO微棒的直径可小至250 nm。利用x射线衍射、透射电子显微镜和光致发光光谱进一步研究了ZnO微棒的结构和光学特性。(c) 2006年美国物理研究所。
The use of a wet chemical method to selectively grow ZnO microrod and nanorod arrays on Si substrates is described. To control the size and position of the ZnO microrods and nanorods, polymethylmethacrylate (PMMA) submicron patterns were prepared on the Si substrates with an intermediate ZnO layer using e-beam lithography. Selective growth of the ZnO structures was achieved by the absence of ZnO nucleation sites on the PMMA mask, resulting in position-controlled growth of ZnO structures only on patterned holes where the ZnO layer was exposed. In addition, the diameters of the ZnO microrods were determined by the patterned hole size, and the diameters as small as 250 nm were obtained when a hole diameter of 250 nm was employed. The structural and optical characteristics of the ZnO microrods were further investigated using x-ray diffraction, transmission electron microscopy, and photoluminescence spectroscopy. (c) 2006 American Institute of Physics.