p-type conduction in beryllium-implanted hexagonal boron nitride films
p-type conduction in beryllium-implanted hexagonal boron nitride films
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DOI：
10.1063/1.3276065
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发表时间：
2009-12-21
影响因子：
4
通讯作者：
Hofsaess, H.
中科院分区：
文献类型：
--
作者：
He, B.;Zhang, W. J.;Hofsaess, H.
在六方氮化硼（hBN）薄膜中通过注入铍和随后的快速热退火处理实现了p型导电。研究了hBN薄膜的相组成和电学性能与注入通量和退火的关系。最大电阻率降低了6个数量级。霍尔测量显示相应的空穴浓度为3 × 10(19) cm(-3)，迁移率为27 cm(2)/V s。Be离子的活化能估计为0.21 eV。认为hBN是一种很有前途的宽带隙半导体，可用于高温电子器件和透明导电涂层。(C) 2009年美国物理研究所。(doi: 10.1063/1.3276065)
p-type conduction in hexagonal boron nitride (hBN) films was achieved by beryllium implantation and subsequent rapid thermal annealing treatment. The dependence of phase composition and electrical properties of hBN films on the implantation fluence and annealing was studied. A maximum resistivity reduction by six orders of magnitude was demonstrated. Hall measurements revealed a corresponding hole concentration of 3 x 10(19) cm(-3) and mobility of 27 cm(2)/V s. The activation energy of Be ions was estimated to be 0.21 eV. It is suggested that hBN is a promising wide bandgap semiconductor for applications in high-temperature electronic devices and transparent conductive coatings. (C) 2009 American Institute of Physics. [doi:10.1063/1.3276065]