An equivalent circuit model of NBTI effect for short-channel P-MOSFET

An equivalent circuit model of NBTI effect for short-channel P-MOSFET
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DOI:
10.1016/j.microrel.2022.114863
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发表时间:
2022-12
影响因子:
1.6
通讯作者:
Jun'an Zhang;Min Jiang;J. Hu;Yi Xiao;Tiehu Li;Yunhua Lu;Qingwei Zhang
Jun'an Zhang;Min Jiang;J. Hu;Yi Xiao;Tiehu Li;Yunhua Lu;Qingwei Zhang
中科院分区:
工程技术4区
文献类型:
--
作者:
Jun'an Zhang;Min Jiang;J. Hu;Yi Xiao;Tiehu Li;Yunhua Lu;Qingwei Zhang

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