Low Von 17kV SiC IGBT assisted n-MOS Thyristor
Low Von 17kV SiC IGBT assisted n-MOS Thyristor
复制标题
低 Von 17kV SiC IGBT 辅助 n-MOS 晶闸管
DOI：
10.1109/iedm19573.2019.8993648
复制
发表时间：
2019
期刊：
影响因子：
--
通讯作者：
H. Okumura
中科院分区：
文献类型：
--
作者：
S. Matsunaga;T. Mizushima;K. Takenaka;Y. Kiuchi;A. Koyama;Y. Yonezawa;H. Okumura
首次设计并制作了带有IGBT的SiC MOS晶闸管。 5 V 的 Von 和 15 mΩcm2 的 RonA,diff 比在相同晶圆和工艺条件下制造的 IGBT 有所改进。导通特性几乎随温度变化，并且在 423K 时不会恶化。所提出的MOS晶闸管成功地实现了开关操作，并且在导通和关断方面的开关速度与IGBT相当。
The SiC MOS thyristor with IGBT was designed and fabricated for the first time. Von of 5 V and RonA,diff of 15 mΩcm2 were improved over IGBTs fabricated under the same wafer and process conditions. The on-characteristics were almost constant with temperature, and did not deteriorate at 423K. Proposed MOS thyristor succeeded in switching operation, and the switching speed was equivalent to that of the IGBT in both turn-on and turn-off.