The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability
The effects of buffer thickness on GaAs MESFET characteristics: channel-substrate current, drain breakdown, and reliability
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DOI：
10.1016/s0026-2714(02)00064-1
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发表时间：
2002-07
期刊：
影响因子：
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通讯作者：
F. Gao;R. Chanana;T. Nicholls
中科院分区：
文献类型：
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作者：
F. Gao;R. Chanana;T. Nicholls
