Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
Lattice constant and substitutional composition of GeSn alloys grown by molecular beam epitaxy
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DOI：
10.1063/1.4816660
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发表时间：
2013-07-22
影响因子：
4
通讯作者：
Kolodzey, James
中科院分区：
文献类型：
--
作者：
Bhargava, Nupur;Coppinger, Matthew;Kolodzey, James
用固体源分子束外延技术在Ge（001）衬底上生长了Ge_（1-x）Sn_x单晶合金，其锡原子分数x=0.145。Ge 1-xSnx合金在低于250摄氏度的生长温度下形成高质量、连贯的应变层，如高分辨率X射线衍射所示。由卢瑟福背散射光谱沟道法测定的锡在晶格位置上的量被发现在所有合金中超过90%的置换。应变的程度和Ge_（1-x）Sn_x合金的有效无应变体晶格常数与Sn的组成的依赖关系已被确定。(C)2013 AIP Publishing LLC.
Single crystal epitaxial Ge1-xSnx alloys with atomic fractions of tin up to x=0.145 were grown by solid source molecular beam epitaxy on Ge (001) substrates. The Ge1-xSnx alloys formed high quality, coherent, strained layers at growth temperatures below 250 degrees C, as shown by high resolution X-ray diffraction. The amount of Sn that was on lattice sites, as determined by Rutherford backscattering spectrometry channeling, was found to be above 90% substitutional in all alloys. The degree of strain and the dependence of the effective unstrained bulk lattice constant of Ge1-xSnx alloys versus the composition of Sn have been determined. (C) 2013 AIP Publishing LLC.