Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser
Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser
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DOI：
10.1143/jjap.36.4216
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发表时间：
1997-06
影响因子：
1.5
通讯作者：
A. Zhukov;V. Ustinov;A. Egorov;A. Kovsh;Andrey F. Tsatsul\`nikov;N. Ledentsov;S. Zaitsev;N. Gordeev;Peter S. Kopèv Peter S. Kopèv-Peter-S.-Kopèv;Zhores I. Alferov Zhores I. Alferov-Zhores-I.-Alferov
中科院分区：
文献类型：
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作者：
A. Zhukov;V. Ustinov;A. Egorov;A. Kovsh;Andrey F. Tsatsul\`nikov;N. Ledentsov;S. Zaitsev;N. Gordeev;Peter S. Kopèv Peter S. Kopèv-Peter-S.-Kopèv;Zhores I. Alferov Zhores I. Alferov-Zhores-I.-Alferov
The range of negative characteristic temperatures in temperature dependences of threshold current density of low-threshold (In, Ga)As/(Al, Ga)As quantum dot injection lasers has been observed. A model describing the decrease in threshold current density with temperature at low temperatures is proposed.
