Modeling of Crosstalk in Through Silicon Vias
Modeling of Crosstalk in Through Silicon Vias
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DOI：
10.1109/temc.2012.2206816
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发表时间：
2013-02
影响因子：
2.1
通讯作者：
A. Engin;Srinidhi Raghavan Narasimhan
中科院分区：
文献类型：
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作者：
A. Engin;Srinidhi Raghavan Narasimhan
本文给出了三维集成电路中耦合硅通孔(TSV)结构的等效电路模型的解析公式。我们利用多导体传输线方法来模拟耦合的TSV结构。TSV嵌入在有损硅介质中，因此它们的行为类似于金属-绝缘体-半导体(MIS)传输线。我们提出的模型可以准确地捕捉到慢波和介电准瞬变电磁模式之间的转变，这是信息系统传输线的特征，以及金属氧化物半导体(MOS)变容电容。计算结果与二维准静态模拟和三维全波电磁模拟结果吻合较好。推导出的等效电路模型可以很容易地应用于电路模拟器中，以分析三维集成系统中TSV的串扰行为。
This paper presents analytical formulas to extract an equivalent circuit model for coupled through silicon via (TSV) structures in a 3-D integrated circuit. We make use of a multiconductor transmission line approach to model coupled TSV structures. TSVs are embedded in a lossy silicon medium, hence they behave as metal-insulator-semiconductor (MIS) transmission lines. The models we present can accurately capture the transition between slow-wave and dielectric quasi-TEM modes, which are characteristic for MIS transmission lines, as well as the metal-oxide-semiconductor (MOS) varactor capacitance. The results agree well with 2-D quasi-static simulations and 3-D full-wave electromagnetic simulations. The derived equivalent circuit models can easily be applied in circuit simulators to analyze crosstalk behavior of TSVs in a 3-D integrated system.