Microstructural studies on silicon nitride
Microstructural studies on silicon nitride
复制标题
氮化硅的微观结构研究
DOI：
10.1007/bf00552043
复制
发表时间：
1971
影响因子：
4.5
通讯作者：
J. V. Sharp
中科院分区：
文献类型：
--
作者：
A. Evans;J. V. Sharp
用离子束减薄法制备了反应烧结和热压氮化硅的薄样，并用Harwell百万伏显微镜进行了观察。研究发现，反应烧结材料由以β-Si3N4为主的细晶基质α-Si3N4组成。毛孔内经常可以观察到纤维，纤维的类型取决于毛孔的大小。热压材料主要由两种类型的颗粒组成，即β-Si3N4的小角度颗粒和较大的不规则颗粒。角晶之间还有一些非晶态物质和大量的小夹杂物。β-Si3N4的晶粒一般含有位错，对这些位错的检查表明，大多数都有一个<；0001>；Burgers矢量。其余的位错似乎更复杂，经常以多幅图像出现，并未被明确识别。对β-Si3N4中位错的分析表明，<；0001>；位错是最稳定的，也可能是最具流动性的，以{10‘10}为主要滑移面。
Thin specimens of reaction sintered and hot pressed silicon nitride have been prepared by ion beam thinning and examined in the Harwell million volt microscope. It has been found that reaction sintered material consists of large grains, which are mostlyβ-Si3N4, in a fine grained matrix ofα-Si3N4. Fibres are frequently observed within the pores, the type of fibre depending on the size of the pore. The hot pressed material consists largely of two types of grain, small angular grains ofβ-Si3N4and larger irregular grains. There is also some non-crystalline material between the angular grains and there are numerous small unidentified inclusions.The grains ofβ-Si3N4generally contain dislocations and examination of these shows that most have a <0001> Burgers vector. The remaining dislocations appear to be more complex, frequently occurring as multiple images, and have not been unambiguously identified. An analysis of dislocations inβ-Si3N4shows that <0001> dislocations are the most stable and are also likely to be most mobile with {10¯10} as the primary slip plane.