Spinel oxides: Δ1 spin-filter barrier for a class of magnetic tunnel junctions
Spinel oxides: Δ1 spin-filter barrier for a class of magnetic tunnel junctions
复制标题
DOI：
10.1063/1.4722804
复制
发表时间：
2012-05
影响因子：
4
通讯作者：
J. Zhang;Xiaoguang Zhang;Xiufeng Han
中科院分区：
文献类型：
--
作者：
J. Zhang;Xiaoguang Zhang;Xiufeng Han
电极波函数的轨道组成和势垒带隙内的复合能带是决定自旋过滤效应的两个重要因素。这在一类尖晶石氧化物中得到说明，包括MgAl2O4、ZnAl2O4、SiMg2O4和SiZn2O4。通过对复合能带和电子沿着[001]方向的透射率的第一性原理计算，表明由于这两个因素的综合作用，它们具有与MgO相同的Δ1自旋过滤效应.由于与典型的bcc磁性电极比MgO更好的晶格匹配，这些材料为磁性隧道结提供了广泛的候选材料。
The orbital composition of the electrode wave functions and the complex bands within the barrier band gap are two important factors in deciding the spin-filter effect. This is illustrated in a class of spinel oxides, including MgAl2O4, ZnAl2O4, SiMg2O4, and SiZn2O4. Through first-principles calculations of the complex bands and electron transmission along the [001] direction, they are shown to have the same Δ1 spin-filter effect as MgO due to the combination of both factors. Due to better lattice match with typical bcc magnetic electrodes than MgO, these materials provide a broad spectrum of candidate materials for magnetic tunnel junctions.