A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy
A TEM investigation of the initial stages of InSb growth on GaAs (001) by molecular beam epitaxy
复制标题
DOI：
10.1016/0921-5107(90)90027-9
复制
发表时间：
1990-12
影响因子：
3.6
通讯作者：
X. Zhang;A. Staton-bevan;D. W. Pashley
中科院分区：
文献类型：
--
作者：
X. Zhang;A. Staton-bevan;D. W. Pashley
