Electronic properties of 4 f substances at configuration crossover
Electronic properties of 4 f substances at configuration crossover
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4 f 物质在构型交叉时的电子特性
DOI：
10.1103/physrevb.15.1
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发表时间：
1977
期刊：
影响因子：
--
通讯作者：
L. L. Hirst
中科院分区：
文献类型：
--
作者：
L. L. Hirst
在一个集中的4f离子系统中，有两种组态4fn和4fn−1竞争稳定性，在费米能级附近的电子态密度有望发生窄共振。采用基于显式组态的方法，结合适当的组态分裂，我们得到了积分态密度的求和规则和共振宽度的微观估计。宽度与标称混合宽度Δ(εF)=π|V Mix|2ρCond(εF)成正比，但比例因子与所涉及的特定离子状态密切相关。给出了这类体系的电子比热、X射线光电子能谱和穆斯堡尔谱的结果。
In a system of concentrated 4 f ions with two configurations 4 f n and 4 f n− 1 competing for stability, a narrow resonance in the electronic density of states near the Fermi energy is expected. Using an explicitly configuration-based approach with appropriate intraconfigurational splittings included, we obtain a sum rule on the integrated density of states and a microscopic estimate of the resonance width. The width, identifiable with an interconfiguration fluctuation rate, is proportional to the nominal mixing width Δ (ε F)= π| V mix| 2 ρ cond (ε F), but with a proportionality factor depending rather strongly upon the specific ionic states involved. Results are obtained for electronic specific heats, x-ray photoemission linewidths, and Mössbauer spectra in such systems.