GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling
GaAs Thermally Based MEMS Devices—Fabrication Techniques, Characterization and Modeling
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DOI：
10.1007/0-387-25786-1_12
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
T. Lalinsky;M. Drzik;J. Jakovenko;M. Husák
中科院分区：
文献类型：
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作者：
T. Lalinsky;M. Drzik;J. Jakovenko;M. Husák
硅基微机电系统（MEMS）是一种新型的集成化微传感器和微执行器。与此相关，砷化镓（GaAs）提供了许多与Si相关的材料特性和技术优势[1]-[3]。这些包括众所周知的性质，例如直接带隙跃迁和高电子迁移率。
Silicon (Si) based MicroElectroMechanical Systems (MEMS) are now well understood and widely used in various integrated micromachined microsensors and microactuators. In relation to this, gallium arsenide (GaAs) offers a number of material-related properties and technological advantages over Si [1]–[3]. These include well know properties, such as direct band gap transition and high electron mobility.