Optical Kerr signals of GaAs/AlAs multilayer cavities for a short pulse
Optical Kerr signals of GaAs/AlAs multilayer cavities for a short pulse
复制标题
DOI：
10.1002/pssc.200881522
复制
发表时间：
2009-06
期刊：
影响因子：
--
通讯作者：
K. Morita;Toshiyuki Kanbara;S. Yano;T. Kitada;T. Isu
中科院分区：
文献类型：
--
作者：
K. Morita;Toshiyuki Kanbara;S. Yano;T. Kitada;T. Isu
通过光泵浦和超短脉冲探针技术测量了具有不同品质因数 (Q) 的 GaAs/AlAs 多层腔的光学克尔信号。尽管Q值在腔内增强了光强度，但光功率受到腔模式比输入超短脉冲更窄的光谱的限制。测量的克尔信号显示出对品质因数的依赖性比简单考虑空腔场增强效应所预期的更大。看来除了场增强之外，腔内的非线性相移还通过光子寿命而增强。这表明多层腔对于增强光学克尔信号是有用的。 （© 2009 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
Optical Kerr signals of GaAs/AlAs multilayer cavities with various quality factor (Q) were measured by an optical pump and probe technique with ultrashort pulses. Although the light intensity is enhanced in the cavities by Q, light power is restricted by the narrower spectrum of the cavity mode than that of the input ultrashort pulse. The measured Kerr signals showed larger dependence on the quality factor than that expected by simple consideration for the field enhancement effect by cavities. It seems that the nonlinear phase shift in the cavity is enhanced by the photon life time in addition to the field enhancement. This indicates that multilayer cavities are useful for enhancement of the optical Kerr signals. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)