A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC
A study of the formation of nanometer-scale cavities in helium-implanted 4H-SiC
复制标题
DOI：
10.1016/j.nimb.2003.12.082
复制
发表时间：
2004-06
影响因子：
1.3
通讯作者：
Chonghong Zhang;S. Donnelly;V. Vishnyakov;J. Evans;T. Shibayama;Yuna Sun
中科院分区：
文献类型：
--
作者：
Chonghong Zhang;S. Donnelly;V. Vishnyakov;J. Evans;T. Shibayama;Yuna Sun
