Infrared absorption bands induced by Si‐related defects in GaAs: Absorption cross sections
Infrared absorption bands induced by Si‐related defects in GaAs: Absorption cross sections
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GaAs 中与 Si 相关的缺陷引起的红外吸收带：吸收截面
DOI：
10.1063/1.327805
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发表时间：
1980
影响因子：
3.2
通讯作者：
W. Spitzer
中科院分区：
文献类型：
--
作者：
R. T. Chen;V. Rana;W. Spitzer
硅是GaAs中的两性杂质，并且以不同的缺陷配置存在。这项工作报告的测量的红外吸收截面的一些本地化的振动模式带有关的Si缺陷。重掺杂的熔融生长样品用于测量自由载流子密度ne和归因于电活性缺陷的所有带的积分吸收。通过使用两种不同模型的最小二乘拟合程序分析所得数据。一组的吸收截面给出了每个模型。这些结果与最近报道的其他结果不同。使用两组横截面来解释p型液相外延样品的吸收光谱似乎重申了先前报道的解释，其中存在未知性质的额外Si相关受主缺陷。
Silicon is an amphoteric impurity in GaAs and is present in different defect configurations. This work reports measurements of the infrared absorption cross sections for some of the localized vibrational mode bands related to the Si defects. Heavily doped melt‐grown samples are used to measure the free‐carrier density ne and the integrated absorption of all bands attributed to electrically active defects. The resulting data are analyzed by using a least‐squares‐fitting procedure employing two different models. A set of absorption cross sections is given for each model. These results differ from others reported recently. Using the two sets of cross sections to interpret the absorption spectra of p‐type liquid‐phase epitaxial samples seems to reaffirm a previously reported interpretation in which an additional Si‐related acceptor defect of unknown nature is present.