Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size
Breakdown in p‐n junction diodes made on polycrystalline silicon of large grain size
复制标题
大晶粒多晶硅 p-n 结二极管的击穿
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
M. Satyam
中科院分区：
文献类型：
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作者：
K. Natarajan;K. Ramkumar;M. Satyam
本通讯描述了在大晶粒尺寸多晶硅上制造的p-n结击穿区的电压-电流特性。所观察到的软击穿特性已被解释考虑到晶界附近的结的曲率的效果。
This communication describes the voltage‐current characteristics in the breakdown region of p‐n junctions made on polycrystalline silicon of large grain size. The observed soft breakdown characteristics have been explained by taking into account the effect of curvature of the junction near the grain boundaries.