Corner Effect and Local Volume Inversion in SiNW FETs
Corner Effect and Local Volume Inversion in SiNW FETs
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DOI：
10.1109/tnano.2010.2080284
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发表时间：
2011-07-01
影响因子：
2.4
通讯作者：
Ionescu, Adrian Mihai
中科院分区：
文献类型：
--
作者：
De Michielis, Luca;Moselund, Kirsten Emilie;Ionescu, Adrian Mihai
本文基于数值模拟方法，定量研究了全包围栅MOSFET的拐角效应和局部体积反转，比较了不同角度和不同掺杂水平的拐角区对总电流的影响。提出了一种用于提取阈值电压和亚阈值斜率的拐角区域的方法，并对所得值进行了分析，以了解它们对器件特性的影响。
In this paper, a quantitative study of the corner effect and of the local volume inversion on gate-all-around MOSFETs based on numerical simulations has been carried out; different angles and doping levels are compared, in order to understand the impact of the corner regions on the total current. A method for the extraction of the threshold voltage and of the subthreshold slope of the corner region has been proposed, and the resulting values have been analyzed in order to understand their effects on the device characteristics.