Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
Giant Thermal Transport Tuning at a Metal/Ferroelectric Interface
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DOI：
10.1002/adma.202105778
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发表时间：
2021-10
影响因子：
29.4
通讯作者：
Y. Zang;Chen Di;Zhiming Geng;Xue-jun Yan;D. Ji;Ningchong Zheng;Xingyu Jiang;Hanyu Fu;Jianjun Wang;Wei Guo;Haoying Sun;Lu Han;Yunlei Zhou;Z. Gu;Desheng Kong;H. Aramberri;C. Cazorla;J. Íñiguez;R. Rurali;Long-qing Chen;Jian Zhou;Di Wu;Minghui Lu;Y. Nie;Yan-Feng Chen;Xiaoqing Pan
中科院分区：
文献类型：
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作者：
Y. Zang;Chen Di;Zhiming Geng;Xue-jun Yan;D. Ji;Ningchong Zheng;Xingyu Jiang;Hanyu Fu;Jianjun Wang;Wei Guo;Haoying Sun;Lu Han;Yunlei Zhou;Z. Gu;Desheng Kong;H. Aramberri;C. Cazorla;J. Íñiguez;R. Rurali;Long-qing Chen;Jian Zhou;Di Wu;Minghui Lu;Y. Nie;Yan-Feng Chen;Xiaoqing Pan
界面热输运在纳米尺度物体的热管理中起着非常重要的作用，对基础研究和纳米器件具有重要意义。在金属/绝缘体界面，这是电子设备中常见的一种配置，热传输强烈地依赖于从金属中的受热电子到绝缘体中的声子的有效能量传递。然而，金属/绝缘体界面的界面电子-声子耦合和热输运的机制还不是很清楚。本文报道了Al/BiFeO_3薄膜中界面热阻的显著提高和金属/铁电界面表面电荷的重要作用。通过施加单轴应变，界面热阻可以发生很大的变化(可达一个数量级)，这归因于极化旋转引起的界面电荷重新分布导致的重整化界面电声耦合。这些结果表明，金属/绝缘体界面上的表面电荷可以显著增强界面电子-声子介导的热耦合，为优化下一代纳米器件、电力电子器件和热逻辑器件的热输运性能提供了一条新的途径。
Interfacial thermal transport plays a prominent role in the thermal management of nanoscale objects and is of fundamental importance for basic research and nanodevices. At metal/insulator interfaces, a configuration commonly found in electronic devices, heat transport strongly depends upon the effective energy transfer from thermalized electrons in the metal to the phonons in the insulator. However, the mechanism of interfacial electron–phonon coupling and thermal transport at metal/insulator interfaces is not well understood. Here, the observation of a substantial enhancement of the interfacial thermal resistance and the important role of surface charges at the metal/ferroelectric interface in an Al/BiFeO3 membrane are reported. By applying uniaxial strain, the interfacial thermal resistance can be varied substantially (up to an order of magnitude), which is attributed to the renormalized interfacial electron–phonon coupling caused by the charge redistribution at the interface due to the polarization rotation. These results imply that surface charges at a metal/insulator interface can substantially enhance the interfacial electron–phonon‐mediated thermal coupling, providing a new route to optimize the thermal transport performance in next‐generation nanodevices, power electronics, and thermal logic devices.