Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice
Ultrasensitive and ultrathin phototransistors and photonic synapses using perovskite quantum dots grown from graphene lattice
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DOI：
10.1126/sciadv.aay5225
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发表时间：
2020-02-01
期刊：
影响因子：
13.6
通讯作者：
Thomas, Jayan
中科院分区：
文献类型：
--
作者：
Pradhan, Basudev;Das, Sonali;Thomas, Jayan
有机-无机卤化物钙钛矿量子点（PQDs）在许多光电应用中是一类有吸引力的材料。然而，它们的电荷输运性能不如石墨烯等材料。另一方面，石墨烯的电荷产生效率太低，不能用于许多光电应用。在这里，我们展示了利用石墨烯晶格直接生长pqd制备的石墨烯- pqd （G-PQD）上层结构来开发超薄光电晶体管和光子突触。我们证明了G-PQDs上层结构在单个平台上同步有效的电荷产生和输运。G-PQD光电晶体管在430 nm处具有1.4 × 10(8) AW（-1）的响应率和4.72 × 10(15) Jones的比检出率。此外，这些超结构的光辅助记忆效应使光子突触行为成为可能，其中神经形态计算通过机器学习辅助下的面部识别来证明。我们预计G-PQD超结构将为高效光电器件的发展提供新的方向。
Organic-inorganic halide perovskite quantum dots (PQDs) constitute an attractive class of materials for many opto-electronic applications. However, their charge transport properties are inferior to materials like graphene. On the other hand, the charge generation efficiency of graphene is too low to be used in many optoelectronic applications. Here, we demonstrate the development of ultrathin phototransistors and photonic synapses using a graphene-PQD (G-PQD) superstructure prepared by growing PQDs directly from a graphene lattice. We show that the G-PQDs superstructure synchronizes efficient charge generation and transport on a single platform. G-PQD phototransistors exhibit excellent responsivity of 1.4 x 10(8) AW(-1) and specific detectivity of 4.72 x 10(15) Jones at 430 nm. Moreover, the light-assisted memory effect of these superstructures enables photonic synaptic behavior, where neuromorphic computing is demonstrated by facial recognition with the assistance of machine learning. We anticipate that the G-PQD superstructures will bolster new directions in the development of highly efficient optoelectronic devices.