The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects
The ultra-sensitive electrical detection of spin-Rabi oscillation at paramagnetic defects
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DOI：
10.1016/j.physb.2005.12.231
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发表时间：
2006-04-01
影响因子：
2.8
通讯作者：
Lips, K
中科院分区：
文献类型：
--
作者：
Boehme, C;Lips, K
对脉冲电检测磁共振 (pEDMR) 实验进行了简短回顾。 PEDMR 可以通过瞬态电流测量来高度灵敏地观察载流子的相干电子自旋运动和半导体中的缺陷。讨论了半导体电子跃迁研究的理论基础、实验实施、敏感性及其潜力。以晶体硅 (111) 与二氧化硅界面处的 P-b 中心为例，通过实验展示了如何检测自旋拉比振荡、其相移、相干性衰减和自旋耦合效应。 (c) 2006 Elsevier B.V. 保留所有权利。
A short review of the pulsed electrically detected magnetic resonance (pEDMR) experiment is presented. PEDMR allows the highly sensitive observation of coherent electron spin motion of charge carriers and defects in semiconductors by means of transient current measurements. The theoretical foundations, the experimental implementation, its sensitivity and its potential with regard to the investigation of electronic transitions in semiconductors are discussed. For the example of the P-b center at the crystalline silicon (111) to silicon dioxide interface it is shown experimentally how one can detect spin Rabi-oscillation, its dephasing, coherence decays and spin-coupling effects. (c) 2006 Elsevier B.V. All rights reserved.