Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study
Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study
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DOI：
10.1063/1.3327004
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发表时间：
2010-03-15
影响因子：
3.2
通讯作者：
Oh, J. E.
中科院分区：
文献类型：
--
作者：
Kim, Y. H.;Ruh, H.;Oh, J. E.
使用透射电子显微镜技术详细研究了在图案化蓝宝石衬底 (PSS) 上生长的 GaN 层的微观结构特性，以确定位错和生长行为。在突出图案上观察到规则且均匀的再结晶GaN岛。在平坦的蓝宝石表面上，GaN与衬底之间存在(GaN)(on)(FS)//<1(1)over bar 00>(蓝宝石)和{101}(GaN)(on)(FS)//{1(2)over bar 13}(蓝宝石)的晶体取向关系。另一方面，在GaN层中确认了(GaN)(层)//(GaN)(岛)(IS上)//<1(1)棒00上>(蓝宝石)和{1(1)棒01上}(GaN)(层)//{0002}(GaN)(岛)(上)(IS)//{1(2)棒13上}(蓝宝石)的取向关系，倾斜蓝宝石表面和 PSS 上的再结晶 GaN 岛。突出图案之间的平坦表面开始被GaN快速填充。然后，随着生长时间的增加，GaN 逐渐超出突出图案并在顶部附近聚结。在突出图案顶部附近的接合点附近观察到了穿透位错的产生。 (C) 2010 美国物理研究所。[doi:10.1063/1.3327004]
The microstructural properties of a GaN layer grown on a patterned sapphire substrate (PSS) were studied in detail using transmission electron microscope techniques to determine dislocation and growth behaviors. Regular and uniform recrystallized GaN islands were observed on the protruding pattern. On a flat sapphire surface, the crystallographic orientation relationship of (GaN) (on) (FS)//< 1 (1) over bar 00 >(sapphire) and {101}(GaN) (on) (FS)//{1 (2) over bar 13}(sapphire) existed between the GaN and the substrate. On the other hand, the orientation relationship of (GaN) (layer)//(GaN) (island) (on IS)//< 1 (1) over bar 00 >(sapphire) and {1 (1) over bar 01}(GaN) (layer)//{0002}(GaN) (island) (on) (IS)//{1 (2) over bar 13}(sapphire) was confirmed among the GaN layer, the recrystallized GaN islands on an inclined sapphire surface and the PSS. The flat surface among the protruding patterns began to fill rapidly with GaN. Then, the GaN gradually overgrew the protruding pattern and coalesced near the summit as the growth time increased. The generation of threading dislocations was observed in the vicinity of the coalescence points near the top of the protruding patterns. (C) 2010 American Institute of Physics.[doi:10.1063/1.3327004]