Stable, solution-processed, high-mobility ZnO thin-film transistors
Stable, solution-processed, high-mobility ZnO thin-film transistors
复制标题
DOI：
10.1021/ja068876e
复制
发表时间：
2007-03-14
影响因子：
15
通讯作者：
Loutfy, Rafik
中科院分区：
文献类型：
--
作者：
Ong, Beng S.;Li, Chensha;Loutfy, Rafik
采用Zn（OAc）（2）/2-乙醇胺的甲氧基乙醇溶液，通过热处理制备了稳定、高迁移率的ZnO薄膜半导体。该ZnO薄膜半导体由紧密堆积的ZnO单晶（类似于30至50 nm）构成，该ZnO单晶具有六方结构，该六方结构呈现c轴垂直于衬底的优选取向。用这种ZnO薄膜半导体制作的薄膜晶体管的场效应迁移率为5-6 cm（2）V ~（-1）s ~（-1），电流通断比为10（5）~ 10（6）。
A stable, high-mobility ZnO thin-film semiconductor was fabricated by thermal treatment of a solution-deposited thin film from a solution of Zn(OAc)(2)/2-ethanolamine in methoxyethanol. This ZnO thin-film semiconductor was composed of closely packed ZnO single crystals (similar to 30 to 50 nm) having a hexagonal structure assuming a preferred orientation with its c-axis perpendicular to the substrate. Field-effect mobility of 5-6 cm(2) V-1 s(-1) and current on-to-off ratio of 10(5)-10(6) were demonstrated with this ZnO thin-film semiconductor in thin-film transistors.