FABRICATION OF DOUBLE-GATED SI FIELD EMITTER ARRAYS FOR FOCUSED ELECTRON-BEAM GENERATION
FABRICATION OF DOUBLE-GATED SI FIELD EMITTER ARRAYS FOR FOCUSED ELECTRON-BEAM GENERATION
复制标题
DOI：
10.1116/1.588116
复制
发表时间：
1995-09-01
影响因子：
1.4
通讯作者：
SHIMIZU, K
中科院分区：
文献类型：
--
作者：
ITOH, J;TOHMA, Y;SHIMIZU, K
研制了能产生聚焦电子束的双栅硅保持发射极阵列（FEAs），并对其进行了实验评价。本发明的保持发射极阵列具有由锥形Si尖端和围绕尖端的两个栅极开口（上和下）组成的垂直MEMS结构。下栅极的开口直径为2 μ m，用作控制发射电流的引出电极，上栅极的开口直径为3 μ m，用作聚焦电子轨迹的静电透镜。通过观察位于距场发射体阵列约20 mm处并偏置至1 kV的磷光体（ZnO：Zn）屏的光斑尺寸来评价聚焦特性。从实验结果发现，降低上栅电压（V-F）下降到几伏是非常有效的产生聚焦电子束。在约4V的V-F下，从针尖发射的电子被很好地准直，并且获得约0.1nA/针尖的束电流。(C)1995年美国真空学会。
Double-gated Si held emitter arrays (FEAs) capable of generating focused electron beams were fabricated and experimentally evaluated. The present held emitter array has a vertical triode structure consisting of a conical Si tip and two gate openings (upper and lower) surrounding the tip. The lower gate with a 2-mu m-diam opening acts as an extraction electrode controlling the emission current, and the upper one with a 3-mu m-diam opening acts as an electrostatic lens focusing the electron trajectories. The focusing property was evaluated by observing the spot size of a phosphor (ZnO:Zn) screen located about 20 mm apart from the field emitter array and biased to 1 kV. It was found from experimental results that decreasing the upper gate voltage (V-F) down to a few volts was quite effective to generate focused electron beams. At V-F Of about 4 V, the electrons emitted from the tip were well collimated and a beam current of about 0.1 nA/tip was obtained. (C) 1995 American Vacuum Society.