MoS2/SnS@C hollow hierarchical nanotubes as superior performance anode for sodium-ion batteries

MoS2/SnS@C hollow hierarchical nanotubes as superior performance anode for sodium-ion batteries
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MoS2/SnS@C空心分级纳米管作为钠离子电池的高性能阳极

DOI:
10.1016/j.nanoen.2021.106568
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发表时间:
2021-09
期刊:
影响因子:
17.6
通讯作者:
Zheng Jun-chao
Zheng Jun-chao
中科院分区:
材料科学1区
文献类型:
--
作者:
Tang Lin-bo;Zhang Bao;Peng Tao;He Zhen-jiang;Yan Cheng;Mao Jing;Dai Kehua;Wu Xian-wen;Zheng Jun-chao

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作为一种二维层状材料,SnS具有较高的理论容量(1022 mA/g−1)和较大的层间距(4.33 mA),被认为是一种很有前途的钠存储负极材料。但其体积膨胀大,电子导电性低,阻碍了其应用。本文通过简单的溶剂热反应合成了一种独特的具有自支撑结构的MoS2/SnS@C中空多层纳米管。结果表明,空心纳米管结构可以支撑材料结构,并提供较大的钠离子迁移通道。此外,SnS和MoS2之间形成的异质结可以有效地降低钠离子扩散的动能垒。此外,空心分层纳米管可以有效地缓解SnS固溶过程中的径向和环向应力,抑制材料的体积膨胀,并在很大程度上提高材料的电容贡献率。作为钠离子电池负极材料的MoS2/SnS@C复合材料具有优异的倍率和循环性能。在15A/−1的大电流密度下,放电容量约为325mA/g−1;以5A/g−1的电流密度循环2000次后,容量保持在292 mA/h/−1左右。
As a two-dimensional layered material, SnS is considered a promising candidate anode material for sodium storage due to its high theoretical capacity (1022 mA h g−1) and large interlayer spacing (4.33 Å). However, its application is hindered by its large volume expansion and low electronic conductivity. Herein, a unique MoS2/SnS@C hollow hierarchical nanotube with self-supporting structure was synthesized through a facile solvothermal reaction. The results indicate that the hollow nanotube structure can support the material structure and provide a large sodium-ion migration channel. In addition, the heterojunction that formed between SnS and MoS2can effectively reduce the kinetic barrier of sodium-ion diffusion. Furthermore, the hollow hierarchical nanotube can effectively alleviate the radial and hoop stresses of the SnS sodiation process, inhibit the volume expansion of the material, and increase the capacitance contribution ratio of the material at a high rate. The MoS2/SnS@C composites used as anode materials in sodium-ion batteries (SIBs) delivered excellent rate and cycle performance. The discharge capacity was about 325 mA h g−1at a high current density of 15 A g−1, and it remained at about 292 mA h g−1after 2000 cycles at 5 A g−1current density.
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