Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system
Evaluation of the electronic states in highly Ce doped Si films grown by low temperature molecular beam epitaxy system
复制标题
低温分子束外延系统生长的高掺杂 Ce 硅薄膜的电子态评估
DOI：
10.1016/j.jcrysgro.2015.03.013
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发表时间：
2015
影响因子：
1.8
通讯作者：
Norifumi Fujimura
中科院分区：
文献类型：
--
作者：
Yusuke Miyata;Yukinori Nose;Takeshi Yoshimura;Atsushi Ashida;Norifumi Fujimura
