A Radial Stub Test Circuit for Microwave Power Devices
A Radial Stub Test Circuit for Microwave Power Devices
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DOI：
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发表时间：
2006-10
影响因子：
5.1
通讯作者：
Luo Wei-jun;Chen Xiaojuan;Liang Xiaoxin;Ma Xiaolin;L. Xinyu;Wang Xiaoliang
中科院分区：
文献类型：
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作者：
Luo Wei-jun;Chen Xiaojuan;Liang Xiaoxin;Ma Xiaolin;L. Xinyu;Wang Xiaoliang
根据微波电路和半导体器件物理原理，设计并仿真了两个结合测试夹具的微波功率器件测试电路，并利用参数网络分析仪在3 ~ 8GHz频率范围内对其性能进行了评价。仿真和实验结果验证了带径向短段的测试电路优于不带径向短段的测试电路。以c波段AlGaN/GaN HEMT微波功率器件为例，采用所设计的电路和夹具进行了测试。在5.4GHz微波输入信号下，最大增益为8.75dB，最大输出功率为33.2dBm。
With the principles of microwave circuits and semiconductor device physics, two microwave power device test circuits combined with a test fixture are designed and simulated, whose properties are evaluated by a parameter network analyzer within the frequency range from 3 to 8GHz. The simulation and experimental results verify that the test circuit with a radial stub is better than that without. As an example, a C-band AlGaN/GaN HEMT microwave power device is tested with the designed circuit and fixture. With a 5.4GHz microwave input signal, the maximum gain is 8.75dB, and the maximum output power is 33.2dBm.