Dislocation luminescence in GaN single crystals under nanoindentation.
Dislocation luminescence in GaN single crystals under nanoindentation.
复制标题
纳米压痕下GaN单晶的位错发光
DOI：
10.1186/1556-276x-9-649
复制
发表时间：
2014
影响因子：
--
通讯作者：
Ren GQ
中科院分区：
文献类型：
--
作者：
Huang J;Xu K;Fan YM;Wang JF;Zhang JC;Ren GQ
本工作利用奈米压痕、阴极发光及拉曼光谱等方法，对氮化镓中的位错发光进行了实验研究。在阴极射线发光测量中，位错发光峰位于3.12eV处，表现出一系列特殊的性质，在500°C退火后，位错发光峰完全消失。拉曼光谱显示在凹进区域中存在空位的证据。包括阴极发光、拉曼和退火实验在内的全面研究允许将位错发光归因于涉及Ga空位的导带受体跃迁。通过考虑位错发光机制可以更好地理解GaN的纳米塑性。
This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after annealing at 500°C. Raman spectroscopy shows evidence for existence of vacancies in the indented region. A comprehensive investigation encompassing cathodoluminescence, Raman, and annealing experiments allow the assignment of dislocation luminescence to conduction-band-acceptor transition involving Ga vacancies. The nanoscale plasticity of GaN can be better understood by considering the dislocation luminescence mechanism.