Polarization engineering in III-nitride based ultraviolet light-emitting diodes
Polarization engineering in III-nitride based ultraviolet light-emitting diodes
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DOI：
10.1117/12.2003779
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发表时间：
2013-03
期刊：
影响因子：
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通讯作者：
Yu-Rui Lin;B. Liou;Jih-Yuan Chang;Y. Kuo
中科院分区：
文献类型：
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作者：
Yu-Rui Lin;B. Liou;Jih-Yuan Chang;Y. Kuo
在这项研究中，在III族氮化物基紫外（UV）发光二极管（LED）的偏振效应进行了理论研究。在有源区中提出了一些具体的设计，以减少极化效应，从而提高器件的性能。模拟结果表明，在有源区中采用合理设计的四元AlInGaN材料，可以降低异质层间的极化失配，从而提高空穴注入效率。另一方面，由于电子的有效电势高度增加，电子泄漏被抑制。因此，在有源区进行偏振工程可以显著提高紫外发光二极管的性能。
In this study, the polarization effect in III-nitride based ultraviolet (UV) light-emitting diodes (LEDs) has been investigated theoretically. Some specific designs in active region are proposed to reduce the polarization effect and, hence, improve the device performance. Simulation results show that by utilizing properly designed quaternary AlInGaN material in active region, the hole injection efficiency can be enhanced due to the reduction of polarization mismatch between hetero-layers. On the other hand, the electron leakage is suppressed owing to that the effective potential height for electrons is increased. Therefore, the performance of UV LEDs is significantly improved by the polarization engineering in active region.