Possible Phase Transition Deep Inside the Hidden Order Phase of Ultra clean URu2Si2

Possible Phase Transition Deep Inside the Hidden Order Phase of Ultra clean URu2Si2
复制标题

超洁净 URu2Si2 隐藏有序相深处可能发生的相变

DOI:
10.1103/physrevlett.102.156403
复制
发表时间:
2009
期刊:
Phys. Rev. Lett
影响因子:
--
通讯作者:
and Y. Matsuda
and Y. Matsuda
中科院分区:
--
文献类型:
--
作者:
H. Shishido;K. Hashimoto;T. Shibauchi;T. Sasaki;H. Oizumi;N. Kobayashi;T. Takamasu;K. Takenaka;Y. Imanaka;T. D. Matsuda;Y. Haga;Y. Onuki;and Y. Matsuda

文献摘要

相似文献

为了阐明重费米子化合物中隐序态的本质,我们测量了超净晶体在高场低温下的电输运性质。与以往的研究不同,本系统与少得多的杂质散射解决了一个明显的异常的霍尔电阻率,远低于破坏场的HO阶段。此外,一种新的量子振荡出现在稍低的磁场之上。这些结果表明,费米面的突然重建,这意味着可能的相变以及内的HO相位所造成的带依赖的破坏的HO参数。
To elucidate the underlying nature of the hidden order (HO) state in heavy-fermion compound, we measure electrical transport properties of ultraclean crystals in a high field, low temperature regime. Unlike previous studies, the present system with much less impurity scattering resolves a distinct anomaly of the Hall resistivity at, well below the destruction field of the HO phase. In addition, a novel quantum oscillation appears above a magnetic field slightly below. These results indicate an abrupt reconstruction of the Fermi surface, which implies a possible phase transition well within the HO phase caused by a band-dependent destruction of the HO parameter.